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| SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG05DXTET TVS Diode for ESD Protection in Portable Electronics B FEATURES 30 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current. H P 3 1 B1 5 C DIM A 2 D A1 B B1 C D H J P 4 P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2+ 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 A1 C A APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. 1. NC 2. COMMON ANODE 3. (TVS) D1 CATHODE 4. (TVS) D2 CATHODE 5. (TVS) D3 CATHODE TESV Marking 5 MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Junction Temperature Storage Temperature ) SYMBOL PPK Tj Tstg RATING 30 150 -55 150 UNIT W 1 TF 2 5 4 D3 D2 D1 J Type Name 4 3 1 2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Junction Capacitance SYMBOL VRWM VBR IR CJ It=1mA VRWM=4.3V VR=0V, f=1MHz TEST CONDITION MIN. 6.47 TYP. 12 MAX. 5 7.14 1 15 UNIT V V A pF 2007. 9. 10 Revision No : 2 3 1/2 PG05DXTET NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME PEAK PULSE POWER PP P (W) 1K 110 POWER DERATION CURVE RATED POWER OR IPP (%) 100 100 90 80 70 60 50 40 30 20 10 0 0 25 50 Peak Pulse Power 8/20us Average Power 10 1 10 100 75 100 125 150 PULSE DURATION tP (s) AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM PEAK PULSE CURRENT IPP (%) 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 Waveform Parameters : tr=8s td=20s e -t CJ - VR 12 (pF) CAPACITANCE CJ 10 8 6 4 2 0 0 1 2 3 4 5 td=lpp/2 TIME (s) REVERSE VOLTAGE VR (V) 2007. 9. 10 Revision No : 2 2/2 |
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